features low equivalent on-resistance marking :591 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -80 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =- 100 a, i e =0 -80 v collector-emitter breakdown voltage v (br)ceo 1 i c =- 10 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =- 100 a, i c =0 -5 v collector cut-off current i cbo v cb =- 60 v, i e =0 -0.1 a emitter cut-off current i ebo v eb =- 4 v, i c =0 -0.1 a h fe(1) v ce =- 5 v, i c =- 1 ma 100 h fe(2) 1 v ce =- 5 v, i c =- 500 ma 100 300 h fe(3) 1 v ce =- 5 v, i c =- 1 a 80 dc current gain h fe(4) 1 v ce =- 5 v, i c =-2a 15 v ce(sat)1 1 i c =- 500 ma, i b =- 50 ma -0.3 v collector-emitter saturation voltage v ce(sat)2 1 i c =- 1 a, i b =- 100 ma -0.6 v base-emitter saturation voltage v be(sat) 1 i c =- 1 a, i b =- 100 ma -1.2 v base-emitter voltage v be 1 v ce =- 5 v, i c =- 1 a -1 v transition frequency f t v ce =- 10 v,i c =- 50 ma,,f= 100 mhz 150 mhz collector output capacitance c ob v cb =- 10 v,f= 1 mhz 10 pf 1 measured under pulsed conditions, pulse width=300 s, duty cycle 2%. so t -23 1. base 2. emitter 3. collector transistor (pnp) FMMT591 1 date:2011/05 www.htsemi.com semiconductor jinyu
FMMT591 typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu
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